Some reasons of emission variation in InAs quantum dot-in-a-well structures
نویسندگان
چکیده
منابع مشابه
Intraband Auger Effect in InAs/InGaAlAs/InP Quantum Dot Structures
T. Gebhard1, D. Alvarenga2, P.L. Souza3, P.S.S. Guimarães2, K. Unterrainer1, M.P. Pires4, G.S. Vieira5, and J.M. Villas Boas6 1Center for Micro & Nanostructures, TU, Vienna, Austria 2 Departamento de Fisica, UFMG, Belo Horizonte, Brazil 3 LabSem/CETUC, PUC, Rio de Janeiro, Brazil 4 Instituto de Fisica, UFRJ, Rio de Janeiro, Brazil 5 Divisão de Fisica Aplicada, IEA, São José dos Campos, Brazil 6...
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Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer). Different optical transitions between...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2010
ISSN: 1742-6596
DOI: 10.1088/1742-6596/245/1/012060